IPD60R170CFD7ATMA1

Teknik Özellikler

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

14A Tc

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

14A

Drain To Source Voltage Vdss

650V

Transistor Application

SWITCHING

Rds On Max Id Vgs

170m Ω @ 6A, 10V

Pulsed Drain Currentmax Idm

51A

Drainsource On Resistancemax

0.17Ohm

Input Capacitance Ciss Max Vds

1199pF @ 400V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

28nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

76W Tc

Vgsth Max Id

4.5V @ 300μA

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ CFD7

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN