IPD50R950CEAUMA1

Teknik Özellikler

Yükseklik

2.41mm

Rds On Max

950 mΩ

Fall Time Typ

19.5 ns

Pin Sayısı

3

Parça Durumu

Active

Nem Hassasiyeti (MSL)

3 (168 Hours)

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

25 ns

Turn On Delay Time

7 ns

Power Dissipation

34W

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

REACH Uyumluluk Kodu

not_compliant

Uzunluk

6.73mm

Element Configuration

Single

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

500V

Pulsed Drain Currentmax Idm

12.8A

Drain To Source Voltage Vdss

500V

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Drain To Source Resistance

950mOhm

Kılıf / Paket

TO-252-3

Max Power Dissipation

34W

Rise Time

4.9ns

Continuous Drain Current Id

4.3A

Genişlik

6.22mm

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

68 mJ

JESD-609 Kodu

e3

Min. Çalışma Sıcaklığı

-55°C

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tape & Reel (TR)