IPD50R650CEAUMA1

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Turn Off Delay Time

27 ns

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Power Dissipation

47W

Turn On Delay Time

6 ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Single

Drain To Source Breakdown Voltage

500V

Transistor Application

SWITCHING

Number Of Channels

1

Drain To Source Voltage Vdss

500V

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Fall Time Typ

13 ns

Rds On Max

650 mΩ

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Nem Hassasiyeti (MSL)

3 (168 Hours)

Weight

3.949996g

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Min. Çalışma Sıcaklığı

-55°C

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Polaritychannel Type

N-CHANNEL

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Number Of Elements

1

Input Capacitance

342pF

Drain To Source Resistance

650mOhm

Max Power Dissipation

47W

Case Connection

DRAIN

Kılıf / Paket

TO-252-3

Continuous Drain Current Id

6.1A

Rise Time

5ns

Kurşunsuz Kodu

yes