IPD50R380CEAUMA1

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

14.1A Tc

Turn Off Delay Time

35 ns

Turn On Delay Time

7.2 ns

Power Dissipation

98W

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Input Capacitance Ciss Max Vds

584pF @ 100V

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Fet Feature

Super Junction

Vgsth Max Id

3.5V @ 260μA

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

500V

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

3V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Rds On Max Id Vgs

380m Ω @ 3.2A, 13V

Drain To Source Breakdown Voltage

500V

Number Of Channels

1

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Yükseklik

2.55mm

Gate Charge Qg Max Vgs

24.8nC @ 10V

Drive Voltage Max Rds On Min Rds On

13V

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

3 (168 Hours)

Vgs Max

±20V