IPD50R2K0CEAUMA1

Teknik Özellikler

Kurşunsuz

Contains Lead, Lead Free

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2008

Fabrika Tedarik Süresi

18 Weeks

Drain To Source Breakdown Voltage

500V

Rds On Max Id Vgs

2 Ω @ 600mA, 13V

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

13V

Gate Charge Qg Max Vgs

6nC @ 10V

Yükseklik

2.55mm

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Transistor Element Material

SILICON

Power Dissipation Max

33W Tc

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Terminal Sayısı

2

Fet Type

N-Channel

Seri

CoolMOS™ CE

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Continuous Drain Current Id

3.6A

Turn Off Delay Time

21 ns

Power Dissipation

33W

Turn On Delay Time

6 ns

Current Continuous Drain Id25

2.4A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

124pF @ 100V

Drainsource On Resistancemax

2Ohm

Transistor Application

SWITCHING

Max Junction Temperature Tj

150°C

Pin Sayısı

3

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED