IPD50N06S214ATMA2

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Gate Charge Qg Max Vgs

52nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

14.4m Ω @ 32A, 10V

Drain To Source Breakdown Voltage

55V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Yayın Yılı

2008

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

240 mJ

Continuous Drain Current Id

50A

Fet Type

N-Channel

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

136W Tc

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Fall Time Typ

19 ns

Pin Sayısı

3

Drainsource On Resistancemax

0.0144Ohm

Pulsed Drain Currentmax Idm

200A

Input Capacitance Ciss Max Vds

1485pF @ 25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Element Configuration

Single

Turn Off Delay Time

30 ns

Turn On Delay Time

13 ns

Power Dissipation

136W