IPD50N04S4L08ATMA1

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

+20V, -16V

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

3

Fall Time Typ

18 ns

Gate Charge Qg Max Vgs

30nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

2340pF @ 25V

ECCN Kodu

EAR99

Pulsed Drain Currentmax Idm

200A

Rds On Max Id Vgs

7.3m Ω @ 50A, 10V

Turn On Delay Time

4 ns

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

11 ns

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Yayın Yılı

2010

JESD-609 Kodu

e3

Continuous Drain Current Id

50A

Rise Time

8ns

Avalanche Energy Rating Eas

55 mJ

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101, OptiMOS™

Fet Type

N-Channel

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)