IPD50N04S308ATMA1

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Vgsth Max Id

4V @ 40μA

Power Dissipation Max

68W Tc

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

40V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Rise Time

7ns

Continuous Drain Current Id

50A

JESD-609 Kodu

e3

Current Continuous Drain Id25

50A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2007

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

16 ns

Turn On Delay Time

11 ns

RoHS Durumu

ROHS3 Compliant

Power Dissipation

68W

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Rds On Max Id Vgs

7.5m Ω @ 50A, 10V

Pulsed Drain Currentmax Idm

200A

Drainsource On Resistancemax

0.0075Ohm

Fabrika Tedarik Süresi

26 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2350pF @ 25V

Fall Time Typ

6 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON