IPD50N03S207ATMA1

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Pin Sayısı

3

Fall Time Typ

30 ns

Input Capacitance Ciss Max Vds

2000pF @ 25V

Pulsed Drain Currentmax Idm

200A

Turn On Delay Time

18 ns

Turn Off Delay Time

26 ns

Current Continuous Drain Id25

50A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rise Time

40ns

Reference Standard

AEC-Q101

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Additional Feature

ULTRA LOW RESISTANCE

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

30V

Vgsth Max Id

4V @ 85μA

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

68nC @ 10V

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

Rds On Max Id Vgs

7.3m Ω @ 50A, 10V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Yayın Yılı

2006

JESD-609 Kodu

e3

Continuous Drain Current Id

50A