IPD33CN10NGATMA1

Teknik Özellikler

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

58W Tc

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Seri

OptiMOS™

Fet Type

N-Channel

Case Connection

DRAIN

Continuous Drain Current Id

27A

Avalanche Energy Rating Eas

47 mJ

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Yayın Yılı

2007

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

33m Ω @ 27A, 10V

Jedec95 Code

TO-252AA

Fabrika Tedarik Süresi

18 Weeks

Gate Charge Qg Max Vgs

24nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Vgsth Max Id

4V @ 29μA

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time

21ns

Current Continuous Drain Id25

27A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

58W

Turn On Delay Time

11 ns