IPD30N08S222ATMA1

Teknik Özellikler

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

57nC @ 10V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Rds On Max Id Vgs

21.5m Ω @ 50A, 10V

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2006

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

240 mJ

Continuous Drain Current Id

30A

Case Connection

DRAIN

Fet Type

N-Channel

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Power Dissipation Max

136W Tc

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Fall Time Typ

20 ns

Input Capacitance Ciss Max Vds

1400pF @ 25V

Pulsed Drain Currentmax Idm

120A

Drainsource On Resistancemax

0.0215Ohm

Turn Off Delay Time

33 ns

Turn On Delay Time

13 ns

Current Continuous Drain Id25

30A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Reference Standard

AEC-Q101

Rise Time

30ns