IPD30N06S215ATMA2

Teknik Özellikler

Rds On Max Id Vgs

14.7m Ω @ 30A, 10V

Pulsed Drain Currentmax Idm

120A

Drainsource On Resistancemax

0.0147Ohm

Fabrika Tedarik Süresi

10 Weeks

Input Capacitance Ciss Max Vds

1485pF @ 25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

30A Tc

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

110nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

55V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Vgsth Max Id

4V @ 80μA

Power Dissipation Max

136W Tc

Continuous Drain Current Id

30A

Reference Standard

AEC-Q101

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

240 mJ

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63