IPD25N06S240ATMA2

Teknik Özellikler

Avalanche Energy Rating Eas

80 mJ

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Sayısı

2

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

68W Tc

Vgsth Max Id

4V @ 26μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

55V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

18nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

55V

Rds On Max Id Vgs

40m Ω @ 13A, 10V

Pulsed Drain Currentmax Idm

116A

Drainsource On Resistancemax

0.04Ohm

Drain Currentmax Abs Id

29A

Fabrika Tedarik Süresi

10 Weeks

Input Capacitance Ciss Max Vds

513pF @ 25V

ECCN Kodu

EAR99

Current Continuous Drain Id25

29A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2006

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE