IPD25CN10NGATMA1

Teknik Özellikler

Drainsource On Resistancemax

0.025Ohm

Pulsed Drain Currentmax Idm

140A

Rds On Max Id Vgs

25m Ω @ 35A, 10V

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2070pF @ 50V

Current Continuous Drain Id25

35A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2008

Turn Off Delay Time

13 ns

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

10 ns

RoHS Durumu

ROHS3 Compliant

Power Dissipation

71W

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Fall Time Typ

3 ns

Gate Charge Qg Max Vgs

31nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

71W Tc

Vgsth Max Id

4V @ 39μA

Continuous Drain Current Id

35A

Rise Time

4ns