IPD220N06L3GBTMA1

Teknik Özellikler

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2011

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Jedec95 Code

TO-252AA

Rds On Max Id Vgs

22m Ω @ 30A, 10V

Drain To Source Breakdown Voltage

60V

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

10nC @ 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Power Dissipation Max

36W Tc

Jesd30 Code

R-PSSO-G2

Terminal Sayısı

2

Yüzey Montaj

YES

Case Connection

DRAIN

Seri

OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Kurşunsuz Kodu

no

Continuous Drain Current Id

30A

Element Configuration

Single

Turn On Delay Time

9 ns

Power Dissipation

36W

Turn Off Delay Time

19 ns

Current Continuous Drain Id25

30A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

1600pF @ 30V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

120A

Drainsource On Resistancemax

0.022Ohm

Pin Sayısı

4

Pin Sayısı

3

Gate To Source Voltage Vgs

20V