IPD200N15N3GATMA1

Teknik Özellikler

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

150W Tc

Continuous Drain Current Id

50A

Avalanche Energy Rating Eas

170 mJ

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Case Connection

DRAIN

Rds On Max Id Vgs

20m Ω @ 50A, 10V

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

31nC @ 10V

Drive Voltage Max Rds On Min Rds On

8V 10V

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

150V

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

4V @ 90μA

Rise Time

11ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drainsource On Resistancemax

0.02Ohm

Pulsed Drain Currentmax Idm

200A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

1820pF @ 75V

Current Continuous Drain Id25

50A Tc