IPD180N10N3GATMA1

Teknik Özellikler

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating Eas

50 mJ

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

3.5V @ 33μA

Power Dissipation Max

71W Tc

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

25nC @ 10V

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

100V

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2014

Current Continuous Drain Id25

43A Tc

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

43A

Jedec95 Code

TO-252AA

Drain To Source Voltage Vdss

100V

Drainsource On Resistancemax

0.018Ohm

Pulsed Drain Currentmax Idm

172A

Rds On Max Id Vgs

18m Ω @ 33A, 10V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

1800pF @ 50V

Fabrika Tedarik Süresi

18 Weeks