IPD088N06N3GBTMA1

Teknik Özellikler

Rise Time

40ns

Reach Svhc

No SVHC

Configuration

SINGLE WITH BUILT-IN DIODE

Threshold Voltage

3V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Halogen Free

Not Halogen Free

Max Dual Supply Voltage

60V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Vgsth Max Id

4V @ 34μA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Fall Time Typ

5 ns

Pin Sayısı

3

Pin Sayısı

3

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

200A

Drainsource On Resistancemax

0.0088Ohm

Input Capacitance Ciss Max Vds

3900pF @ 30V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Turn Off Delay Time

20 ns

Turn On Delay Time

15 ns

Power Dissipation

71W

Continuous Drain Current Id

50A

Kurşunsuz Kodu

no

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Case Connection

DRAIN

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

71W Tc

Transistor Element Material

SILICON