IPD082N10N3GATMA1

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

6V 10V

Pin Sayısı

3

Gate Charge Qg Max Vgs

55nC @ 10V

Fall Time Typ

8 ns

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Lead Free

Turn On Delay Time

18 ns

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

31 ns

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

80A Tc

Input Capacitance Ciss Max Vds

3980pF @ 50V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Drainsource On Resistancemax

0.0082Ohm

Rds On Max Id Vgs

8.2m Ω @ 73A, 10V

Transistor Application

SWITCHING

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

110 mJ

Continuous Drain Current Id

80A

Rise Time

42ns

Power Dissipation Max

125W Tc

Vgsth Max Id

3.5V @ 75μA

Montaj

Surface Mount