IPD068P03L3GATMA1

Teknik Özellikler

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

149 mJ

Continuous Drain Current Id

70A

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

P-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2V @ 150μA

Power Dissipation Max

100W Tc

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Gate Charge Qg Max Vgs

91nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

3

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Rds On Max Id Vgs

6.8m Ω @ 70A, 10V

Pulsed Drain Currentmax Idm

280A

Drainsource On Resistancemax

0.0068Ohm

Input Capacitance Ciss Max Vds

7720pF @ 15V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2014

Current Continuous Drain Id25

70A Tc

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE