IPD040N03LGATMA1

Teknik Özellikler

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

38nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

4m Ω @ 30A, 10V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2008

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

60 mJ

Kurşunsuz Kodu

no

Continuous Drain Current Id

90A

JESD-609 Kodu

e3

Fet Type

N-Channel

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

79W Tc

Terminal Pozisyonu

SINGLE

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Fall Time Typ

4.2 ns

Pin Sayısı

4

Pin Sayısı

3

Drain Currentmax Abs Id

89A

Drainsource On Resistancemax

0.0059Ohm

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

400A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

3900pF @ 15V

Current Continuous Drain Id25

90A Tc

Turn Off Delay Time

27 ns

Power Dissipation

79W