IPD038N06N3GATMA1

Teknik Özellikler

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Rds On Max Id Vgs

3.8m Ω @ 90A, 10V

Jedec95 Code

TO-252AA

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Gate Charge Qg Max Vgs

98nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

188W Tc

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Case Connection

DRAIN

Continuous Drain Current Id

90A

Kurşunsuz Kodu

no

Avalanche Energy Rating Eas

165 mJ

JESD-609 Kodu

e3

Current Continuous Drain Id25

90A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Turn Off Delay Time

40 ns

Turn On Delay Time

30 ns

Power Dissipation

188W

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

8000pF @ 30V

Fall Time Typ

5 ns

Pin Sayısı

3

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE