IPD031N03LGATMA1

Teknik Özellikler

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.004Ohm

Pulsed Drain Currentmax Idm

400A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

5300pF @ 15V

Current Continuous Drain Id25

90A Tc

Turn On Delay Time

9 ns

Power Dissipation

94W

Turn Off Delay Time

34 ns

Terminal Pozisyonu

SINGLE

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Fall Time Typ

5 ns

Pin Sayısı

3

Pin Sayısı

4

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

30V

Halogen Free

Halogen Free

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

2.2V @ 250μA

Rise Time

6ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On Max Id Vgs

3.1m Ω @ 30A, 10V

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Yayın Yılı

2008

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Gate Charge Qg Max Vgs

51nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

2