IPB80P04P4L04ATMA1

Teknik Özellikler

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

2.2V @ 250μA

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Gate Charge Qg Max Vgs

176nC @ 10V

Turn Off Delay Time

119 ns

Drain To Source Breakdown Voltage

-40V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radyasyon Dayanımı

No

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

4.4m Ω @ 80A, 10V

Fall Time Typ

65 ns

Fabrika Tedarik Süresi

14 Weeks

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0071Ohm

Genişlik

9.25mm

ECCN Kodu

EAR99

Fet Type

P-Channel

Montaj Tipi

Surface Mount

Vgs Max

±16V

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Yayın Yılı

2011

Drain To Source Voltage Vdss

40V

JESD-609 Kodu

e3

Power Dissipation Max

125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

3800pF @ 25V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

16V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Pin Sayısı

3

Continuous Drain Current Id

-80A

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Rise Time

13ns