IPB80N06S4L07ATMA2

Teknik Özellikler

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

6.7m Ω @ 80A, 10V

Montaj

Surface Mount

Rise Time

3ns

Pin Sayısı

3

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

75nC @ 10V

Turn Off Delay Time

50 ns

Number Of Channels

1

Gate To Source Voltage Vgs

16V

Input Capacitance Ciss Max Vds

5680pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

60V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

79W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2009

Weight

1.946308g

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

2.2V @ 40μA

Parça Durumu

Active

Transistor Element Material

SILICON

Max Dual Supply Voltage

60V

Uzunluk

10mm

Vgs Max

±16V

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Yükseklik

4.4mm

Case Connection

DRAIN