IPB80N06S4L05ATMA2

Teknik Özellikler

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

80 ns

Gate Charge Qg Max Vgs

110nC @ 10V

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

2.2V @ 60μA

Seri

Automotive, AEC-Q101, OptiMOS™

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

5.1m Ω @ 80A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Genişlik

9.25mm

Drainsource On Resistancemax

0.0048Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

13 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±16V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Gate To Source Voltage Vgs

16V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

8180pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

107W Tc

Yayın Yılı

2009

Weight

1.946308g

Rise Time

4ns

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

80A