IPB80N06S407ATMA2

Teknik Özellikler

Fall Time Typ

5 ns

Fabrika Tedarik Süresi

16 Weeks

Power Dissipation

79W

Genişlik

9.25mm

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Turn On Delay Time

15 ns

Yükseklik

4.4mm

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10mm

Vgs Max

±20V

Max Dual Supply Voltage

60V

Drain To Source Resistance

7.1mOhm

Parça Durumu

Active

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 40μA

Yayın Yılı

2009

Weight

1.946308g

Seri

Automotive, AEC-Q101, OptiMOS™

Power Dissipation Max

79W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max

7.1 mΩ

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

4500pF @ 25V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

56nC @ 10V

Turn Off Delay Time

23 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED