IPB80N06S2L07ATMA3

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0097Ohm

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Additional Feature

LOGIC LEVEL COMPATIBLE

Transistor Element Material

SILICON

Parça Durumu

Active

Max Dual Supply Voltage

55V

Vgs Max

±20V

Avalanche Energy Rating Eas

450 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

130nC @ 10V

Input Capacitance Ciss Max Vds

3160pF @ 25V

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Power Dissipation Max

210W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Yayın Yılı

2006

Vgsth Max Id

2V @ 150μA

Kurşunsuz Kodu

yes

Rds On Max Id Vgs

6.7m Ω @ 60A, 10V

Montaj

Surface Mount

Current Continuous Drain Id25

80A Tc

Pulsed Drain Currentmax Idm

320A

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE