IPB80N06S2H5ATMA2

Teknik Özellikler

Halogen Free

Halogen Free

Power Dissipation

300W

Uzunluk

10mm

Max Dual Supply Voltage

55V

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

700 mJ

Element Configuration

Single

Turn On Delay Time

23 ns

Yükseklik

4.4mm

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

4400pF @ 25V

Terminal Formu

GULL WING

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

1997

Montaj

Surface Mount

Rise Time

23ns

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

80A

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0052Ohm

Genişlik

9.25mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

10 Weeks

Fall Time Typ

22 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

55V

Turn Off Delay Time

48 ns

Gate Charge Qg Max Vgs

155nC @ 10V