IPB80N04S4L04ATMA1

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.004Ohm

Kurşunsuz

Contains Lead

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

31 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

+20V, -16V

Max Dual Supply Voltage

40V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Avalanche Energy Rating Eas

100 mJ

Turn On Delay Time

7 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

4690pF @ 25V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

60nC @ 10V

Turn Off Delay Time

22 ns

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

71W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2.2V @ 35μA

Seri

OptiMOS™

Yayın Yılı

2010

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

4m Ω @ 80A, 10V