IPB80N04S2L03ATMA1

Teknik Özellikler

Rise Time

50ns

Rds On Max Id Vgs

3.1m Ω @ 80A, 10V

Current Continuous Drain Id25

80A Tc

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

80A

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

RoHS Compliant

Input Capacitance Ciss Max Vds

6000pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

40V

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

77 ns

Gate Charge Qg Max Vgs

213nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2V @ 250μA

Seri

OptiMOS™

Yayın Yılı

2006

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Obsolete

Vgs Max

±20V

Max Dual Supply Voltage

40V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

810 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn On Delay Time

19 ns

Element Configuration

Single

Case Connection

DRAIN

Power Dissipation

300W

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED