IPB80N04S204ATMA2

Teknik Özellikler

Parça Durumu

Active

Transistor Element Material

SILICON

Max Dual Supply Voltage

40V

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

810 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Turn On Delay Time

26 ns

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Fabrika Tedarik Süresi

10 Weeks

Fall Time Typ

32 ns

Additional Feature

AVALANCHE RATED

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Rise Time

45ns

Rds On Max Id Vgs

3.4m Ω @ 80A, 10V

Current Continuous Drain Id25

80A Tc

Pin Sayısı

3

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

170nC @ 10V

Turn Off Delay Time

56 ns

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5300pF @ 25V

Terminal Formu

GULL WING

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3