IPB80N03S4L02ATMA1

Teknik Özellikler

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

13 ns

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

HTS Kodu

8541.29.00.95

Drainsource On Resistancemax

0.0024Ohm

Kurşunsuz

Contains Lead

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±16V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2.2V @ 90μA

Seri

OptiMOS™

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

62 ns

Gate Charge Qg Max Vgs

140nC @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

2.4m Ω @ 80A, 10V

Current Continuous Drain Id25

80A Tc

Additional Feature

ULTRA LOW RESISTANCE

Halogen Free

Halogen Free

Avalanche Energy Rating Eas

260 mJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Turn On Delay Time

14 ns

Case Connection

DRAIN

Max Dual Supply Voltage

30V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

136W Tc

Yayın Yılı

2007

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant