IPB65R190C6ATMA1

Teknik Özellikler

Ds Breakdown Voltagemin

650V

Qualification Status

Not Qualified

Kurşunsuz Kodu

no

Current Continuous Drain Id25

20.2A Tc

Rds On Max Id Vgs

190m Ω @ 7.3A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

66A

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

RoHS Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

73nC @ 10V

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

1620pF @ 100V

Terminal Formu

GULL WING

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

151W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Yayın Yılı

2004

Seri

CoolMOS™

Vgsth Max Id

3.5V @ 730μA

Drain To Source Voltage Vdss

650V

Yüzey Montaj

YES

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Vgs Max

±20V

Avalanche Energy Rating Eas

485 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE