IPB65R125C7ATMA1

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.125Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

20 Weeks

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Yüzey Montaj

YES

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

89 mJ

Montaj Tipi

Surface Mount

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

35nC @ 10V

Input Capacitance Ciss Max Vds

1670pF @ 400V

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™ C7

Yayın Yılı

2008

Drain To Source Voltage Vdss

650V

Vgsth Max Id

4V @ 440μA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

101W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

75A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

650V

Transistor Application

SWITCHING

Current Continuous Drain Id25

18A Ta

Rds On Max Id Vgs

125m Ω @ 8.9A, 10V

Drain Currentmax Abs Id

18A