IPB65R110CFDAATMA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Additional Feature

HIGH RELIABILITY

Fall Time Typ

6 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Contains Lead

Halogen Free

Halogen Free

Avalanche Energy Rating Eas

845 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Turn On Delay Time

16 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Max Dual Supply Voltage

650V

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

277.8W Tc

Seri

Automotive, AEC-Q101, CoolMOS™

Yayın Yılı

2008

Vgsth Max Id

4.5V @ 1.3mA

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-40°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

68 ns

Gate Charge Qg Max Vgs

118nC @ 10V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

3240pF @ 100V

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Kurşunsuz Kodu

no

Transistor Application

SWITCHING

Current Continuous Drain Id25

31.2A Tc