IPB60R950C6ATMA1

Teknik Özellikler

Max Dual Supply Voltage

600V

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

46 mJ

Turn On Delay Time

10 ns

Case Connection

DRAIN

Power Dissipation

37W

Halogen Free

Halogen Free

Rise Time

8ns

Montaj

Surface Mount

Kurşunsuz Kodu

no

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

4.4A

Pin Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

RoHS Durumu

RoHS Compliant

Input Capacitance Ciss Max Vds

280pF @ 100V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Power Dissipation Max

37W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Reach Svhc

No SVHC

Threshold Voltage

3V

Yayın Yılı

2011

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.95Ohm

Kurşunsuz

Contains Lead

Fall Time Typ

13 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

950m Ω @ 1.5A, 10V

Current Continuous Drain Id25

4.4A Tc

Qualification Status

Not Qualified