IPB60R180P7ATMA1

Teknik Özellikler

Vgs Max

±20V

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON

Case Connection

DRAIN

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

56 mJ

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.18Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

18 Weeks

Pulsed Drain Currentmax Idm

53A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

600V

Current Continuous Drain Id25

18A Tc

Rds On Max Id Vgs

180m Ω @ 5.6A, 10V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

25nC @ 10V

Terminal Kaplaması

Matte Tin (Sn)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

1081pF @ 400V

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Seri

CoolMOS™ P7

Vgsth Max Id

4V @ 280μA

Drain To Source Voltage Vdss

600V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

72W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)