IPB60R165CPATMA1

Teknik Özellikler

Power Dissipation

192W

Halogen Free

Halogen Free

Kurşunsuz

Contains Lead

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

5 ns

Fabrika Tedarik Süresi

40 Weeks

Vgs Max

±20V

Max Dual Supply Voltage

600V

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Turn On Delay Time

12 ns

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

522 mJ

Input Capacitance Ciss Max Vds

2000pF @ 100V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

52nC @ 10V

Turn Off Delay Time

50 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Voltage Rated Dc

600V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Akım Değeri

21A

Vgsth Max Id

3.5V @ 790μA

Seri

CoolMOS™

Yayın Yılı

2008

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

192W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-G2

Pin Sayısı

4

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

21A

Pin Sayısı

3