IPB60R099C7ATMA1

Teknik Özellikler

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Yüzey Montaj

YES

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

97 mJ

Jedec95 Code

TO-263AB

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.099Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

83A

Transistor Application

SWITCHING

Rds On Max Id Vgs

99m Ω @ 9.7A, 10V

Current Continuous Drain Id25

22A Tc

Ds Breakdown Voltagemin

600V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

22A

Input Capacitance Ciss Max Vds

1819pF @ 400V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

42nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Sayısı

2

Vgsth Max Id

4V @ 490μA

Drain To Source Voltage Vdss

650V

Seri

CoolMOS™ C7

Yayın Yılı

2011

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

110W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-G2