IPB60R080P7ATMA1

Teknik Özellikler

Fabrika Tedarik Süresi

18 Weeks

Drainsource On Resistancemax

0.08Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Avalanche Energy Rating Eas

118 mJ

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Yayın Yılı

2014

Seri

CoolMOS™ P7

Vgsth Max Id

4V @ 590μA

Drain To Source Voltage Vdss

650V

Jesd30 Code

R-PSSO-G2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

129W Tc

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

51nC @ 10V

Input Capacitance Ciss Max Vds

2180pF @ 400V

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

110A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

600V

Rds On Max Id Vgs

80m Ω @ 11.8A, 10V

Current Continuous Drain Id25

37A Tc

Transistor Application

SWITCHING