IPB60R060P7ATMA1

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Yükseklik

4.7mm

Case Connection

DRAIN

Turn On Delay Time

23 ns

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.06Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Power Dissipation

164W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

48A Tc

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

48A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

164W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Yayın Yılı

2014

Seri

CoolMOS™ P7

Vgsth Max Id

4V @ 800μA

Drain To Source Voltage Vdss

650V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

67nC @ 10V