IPB600N25N3GATMA1

Teknik Özellikler

Turn On Delay Time

10 ns

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Max Dual Supply Voltage

250V

Power Dissipation

136W

Halogen Free

Halogen Free

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

25A

Pin Sayısı

3

Montaj

Surface Mount

Kurşunsuz Kodu

no

Yayın Yılı

2008

JESD-609 Kodu

e3

Power Dissipation Max

136W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2350pF @ 100V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fall Time Typ

8 ns

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.06Ohm

Kurşunsuz

Contains Lead

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

4

Transistor Application

SWITCHING

Rds On Max Id Vgs

60m Ω @ 25A, 10V

Current Continuous Drain Id25

25A Tc

Qualification Status

Not Qualified