IPB47N10SL26ATMA1

Teknik Özellikler

Parça Durumu

Last Time Buy

Transistor Element Material

SILICON

Max Dual Supply Voltage

100V

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

400 mJ

Montaj Tipi

Surface Mount

Turn On Delay Time

50 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.04Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Power Dissipation

175W

Fabrika Tedarik Süresi

10 Weeks

Fall Time Typ

70 ns

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current Continuous Drain Id25

47A Tc

Rds On Max Id Vgs

26m Ω @ 33A, 10V

Rise Time

100ns

Montaj

Surface Mount

Continuous Drain Current Id

47A

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

135nC @ 10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2500pF @ 25V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

175W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1