IPB200N25N3GATMA1

Teknik Özellikler

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

12 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.02Ohm

Kurşunsuz

Contains Lead

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Rds On Max Id Vgs

20m Ω @ 64A, 10V

Current Continuous Drain Id25

64A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

256A

Pin Sayısı

4

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Seri

OptiMOS™

Vgsth Max Id

4V @ 270μA

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

45 ns

Gate Charge Qg Max Vgs

86nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Turn On Delay Time

18 ns

Max Dual Supply Voltage

250V

Halogen Free

Halogen Free

Power Dissipation

300W

Kurşunsuz Kodu

no

Rise Time

20ns

Montaj

Surface Mount

Pin Sayısı

3

Continuous Drain Current Id

64A

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc