IPB180N06S4H1ATMA2

Teknik Özellikler

Fall Time Typ

15 ns

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Genişlik

9.45mm

ECCN Kodu

EAR99

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

4V @ 200μA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G6

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Number Of Channels

1

Turn Off Delay Time

60 ns

Gate Charge Qg Max Vgs

270nC @ 10V

Drain To Source Breakdown Voltage

60V

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

1.7m Ω @ 100A, 10V

Current Continuous Drain Id25

180A Tc

Case Connection

DRAIN

Yükseklik

4.57mm

Turn On Delay Time

30 ns

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Max Dual Supply Voltage

60V

Uzunluk

10.31mm

Weight

1.59999g

Yayın Yılı

2009

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

250W Tc

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

21900pF @ 25V

Gate To Source Voltage Vgs

20V