IPB180N04S302ATMA1

Teknik Özellikler

Gate Charge Qg Max Vgs

210nC @ 10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

14300pF @ 25V

Terminal Sayısı

6

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Yayın Yılı

2007

Seri

OptiMOS™

Vgsth Max Id

4V @ 230μA

Jesd30 Code

R-PSSO-G6

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Continuous Drain Current Id

180A

Pulsed Drain Currentmax Idm

720A

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

180A Tc

Rds On Max Id Vgs

1.5m Ω @ 80A, 10V

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Power Dissipation

300W

Configuration

SINGLE WITH BUILT-IN DIODE

Additional Feature

ULTRA LOW RESISTANCE

Fabrika Tedarik Süresi

14 Weeks

Max Dual Supply Voltage

40V

Vgs Max

±20V

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Case Connection

DRAIN