IPB120N06S403ATMA2

Teknik Özellikler

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

15 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Genişlik

9.25mm

Drainsource On Resistancemax

0.0028Ohm

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

4V @ 120μA

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number Of Channels

1

Gate Charge Qg Max Vgs

160nC @ 10V

Turn Off Delay Time

80 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

3.2m Ω @ 100A, 10V

Pulsed Drain Currentmax Idm

480A

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Yükseklik

4.4mm

Turn On Delay Time

40 ns

Element Configuration

Single

Max Dual Supply Voltage

60V

Uzunluk

10mm

JESD-609 Kodu

e3

Power Dissipation Max

167W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

1.946308g

Yayın Yılı

2009

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ