IPB120N06S402ATMA2

Teknik Özellikler

Seri

Automotive, AEC-Q101, OptiMOS™

Vgsth Max Id

4V @ 140μA

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn Off Delay Time

50 ns

Gate Charge Qg Max Vgs

195nC @ 10V

Number Of Channels

1

Drain To Source Breakdown Voltage

60V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

480A

Rds On Max Id Vgs

2.8m Ω @ 100A, 10V

Current Continuous Drain Id25

120A Tc

Fall Time Typ

10 ns

Fabrika Tedarik Süresi

16 Weeks

Drainsource On Resistancemax

0.0024Ohm

Genişlik

9.25mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Yayın Yılı

2009

Weight

1.946308g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

188W Tc

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

15750pF @ 25V

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

120A

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Rise Time

5ns