IPB117N20NFDATMA1

Teknik Özellikler

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

8 ns

Rds On Max Id Vgs

11.7m Ω @ 84A, 10V

Current Continuous Drain Id25

84A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

24 ns

Gate Charge Qg Max Vgs

87nC @ 10V

Number Of Channels

1

Drain To Source Breakdown Voltage

200V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Number Of Elements

1

Ambalaj

Cut Tape (CT)

Seri

OptiMOS™

Vgsth Max Id

4V @ 270μA

Max Dual Supply Voltage

200V

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

4.82mm

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

13 ns

Halogen Free

Halogen Free

Power Dissipation

300W

Rise Time

10ns

Montaj

Surface Mount

Pin Sayısı

3

Continuous Drain Current Id

84A

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Max Junction Temperature Tj

175°C